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d a t a sh eet product speci?cation supersedes data of 1997 nov 26 file under integrated circuits, ic19 1998 oct 14 integrated circuits OQ2538HP; oq2538u sdh/sonet stm16/oc48 main amplifiers
1998 oct 14 2 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers OQ2538HP; oq2538u features differential 100 w outputs for direct connection to current-mode logic (cml) inputs wide bandwidth (3 ghz) 48.5 db limiting gain noise figure typically 11 db automatic offset compensation input level-detection circuits for automatic gain control (agc) and loss of signal (los) detection low power dissipation (typically 270 mw) single - 4.5 v supply voltage low cost lqfp48 plastic package. applications main amplifier in synchronous digital hierarchy (sdh) and synchronous optical network (sonet) systems for short, medium and long haul optical transmission level detector for laser diode control loops wideband rf gain block with internal level detectors. general description the OQ2538HP is a limiting amplifier ic intended for use as the main amplifier in 2.5 gbits/s non-return to zero (nrz) transmission systems (sdh/sonet). comprised of four amplifier stages with a total gain of 48.5 db, it provides for a wide input signal dynamic range at a constant cml-compatible output level. two level-detection circuits are provided for monitoring agc and los input signal levels. an internal automatic offset compensation circuit eliminates offset in the amplifier chain. ordering information type number package name description version OQ2538HP lqfp48 plastic low pro?le quad ?at package; 48 leads; body 7 7 1.4 mm sot313-2 oq2538u - bare die; dimensions 2070 2070 380 m m -
1998 oct 14 3 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers OQ2538HP; oq2538u block diagram fig.1 block diagram. handbook, full pagewidth mge745 amp a amp b amp c amp d b in inq ref v ee coff coffq gnd out outq 8 6 45 21 capa 22 44 32 losdc 18 los agcdc agc 19 a 43 3 30 reference voltage for all cells band gap OQ2538HP
1998 oct 14 4 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers OQ2538HP; oq2538u pinning notes 1. pin type abbreviations: o = output, i = input, s = power supply and a = analog function. 2. all gnd and v ee pads must be bonded; do not leave one single gnd or v ee pad unconnected! 3. pads denoted n.c. should not be connected. connections to these pads degrade device performance. symbol pin (OQ2538HP) pad (oq2538u) type (1) description v ee 1, 12, 13, 24, 25, 36, 37, 48 2, 3, 11, 12, 28, 29 (2) s negative power supply n.c. 2, 11, 14, 15, 23, 26, 27, 35, 38, 40, 46, 47 20, 22 (3) - not connected agc 3 30 o recti?er a output gnd 4, 5, 7, 9, 10, 16, 17, 20, 28, 29, 31, 33, 34, 39, 41, 42 1, 4, 5, 8, 13, 14, 16, 18, 19, 21, 23, 24, 31, 32, 34, 36 (2) s ground inq 6 33 i main ampli?er inverting input in 8 35 i main ampli?er input losdc 18 6 o recti?er b reference output los 19 7 o recti?er b output ref 21 9 o band gap reference capa 22 10 a pin for connecting band gap reference decoupling capacitor outq 30 15 o main ampli?er inverted output out 32 17 o main ampli?er output agcdc 43 25 o recti?er a reference output coffq 44 26 a pin for connecting automatic offset control capacitor (return) coff 45 27 a pin for connecting automatic offset control capacitor
1998 oct 14 5 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers OQ2538HP; oq2538u fig.2 pin configuration. handbook, full pagewidth 1 2 3 4 5 6 7 8 9 10 11 36 35 34 33 32 31 30 29 28 27 26 13 14 15 16 17 18 19 20 21 22 23 48 47 46 45 44 43 42 41 40 39 38 12 24 37 25 OQ2538HP mge744 v ee n.c. gnd gnd gnd outq gnd gnd n.c. n.c. v ee v ee n.c. agc gnd gnd inq in gnd n.c. v ee out n.c. n.c. coff coffq agcdc gnd n.c. gnd n.c. v ee v ee gnd gnd gnd n.c. n.c. gnd gnd losdc los gnd capa n.c. v ee v ee ref
1998 oct 14 6 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers OQ2538HP; oq2538u functional description the OQ2538HP is comprised of four dc-coupled amplifier stages along with additional circuitry for offset compensation and level detection. the first amplifier stage contains a modified cherry/hooper amplifying cell with high gain (approximately 20 db) and a wide bandwidth. special attention is paid to minimizing the equivalent input noise at this stage, thus reducing the overall noise level. additional feedback is applied at the second and third stages, improving isolation and reducing the gain to 14 db per stage. the last stage is an output buffer, a unity gain amplifier, with an output impedance of 100 w . the total gain of the OQ2538HP amounts to 48.5 db, thus providing a constant cml-compatible output signal over a wide input signal range. two rectifier circuits are used to measure the input signal level. two separate rf preamplifiers are used to generate the voltage gain needed to obtain a suitable rectifier output voltage. for rectifier a the gain is approximately 18 db, for rectifier b it is about 14 db. the output of rectifier a can be used for agc at the preamplifier stage in front of the OQ2538HP. the output of rectifier b can be used for los detection. there is a linear relationship between the rectifier output voltage and the input signal level provided the amplifiers are not saturated. because the four gain stages are dc-coupled and provide a high overall gain, the effect of the input offset can be considerable. the OQ2538HP features an internal offset compensation circuit for eliminating the input offset. the bandwidth of the offset control loop is determined by an external capacitor. coff and coffq offset compensation automatic offset compensation eliminates the input offset of the OQ2538HP. this offset cancellation influences the low frequency gain of the amplifier stages. with a capacitance of 100 nf between coff and coffq the loop bandwidth will be less than 1.5 khz, small enough to have no influence on amplifier gain over the frequencies of interest. if the capacitor was omitted, the loop bandwidth would be greater than 30 mhz, which would influence the input signal gain. the loop bandwidth can be calculated from the following formula: (1) where c ext is the capacitance connected between coff and coffq. f loop 1 2 p 1250 w c ext ------------------------------------------------ = ref and capa band gap output and decoupling capacitance to reduce band gap noise levels, a 1 nf decoupling capacitor on capa is recommended. since the band gap is referenced to the negative power supply, the decoupling capacitor should be connected between capa and v ee . the band gap voltage is present on pin ref for test purposes only. it is not intended to serve as an external reference. rf input and output connections striplines, or microstrips, with an odd mode characteristic impedance of z o(odd) =50 w must be used for the differential rf connections on the pcb. this applies to both the input signal pair in and inq and to the output signal pair out and outq. the two lines in each pair should have the same length. rf input matching circuit the input circuit for pins in and inq contains internal 100 w resistors decoupled to ground via an internal common mode 6 pf capacitor. the topology is depicted in fig.3. fig.3 rf input topology. handbook, halfpage mgm114 in inq gnd 100 w 6 pf 100 w
1998 oct 14 7 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers OQ2538HP; oq2538u an external 200 w resistor between in and inq is recommended in order to match the inputs to a differential transmission line, coupled microstrip or stripline with an odd mode impedance z o(odd) =50 w , as shown in fig.4. for single-ended excitation, separate matching networks on in and inq, as depicted in fig.5, achieve optimum matching. care should be taken to avoid dc loading, since the OQ2538HP controls its own dc input voltage. the resistors on the unused input inq may be combined for convenience. in both cases, the essence of good matching is the equity of the circuitry on both input pins. the impedance seen on pins in and inq should be as equal as possible. for more information see application note an96051 describing the om5801 stm16 demo board. fig.4 differential input matching. handbook, halfpage differential line z o(odd) = 50 w mgm115 200 w in inq 22 nf 22 nf fig.5 single-ended input matching. handbook, halfpage mgm116 100 w 100 w 50 w in inq 22 nf 22 nf 22 nf 22 nf z o = 50 w transmission line rf output matching circuit matching of the main amplifier outputs, out and outq, is not mandatory. in most applications, the receiving end of the transmission line will be properly matched, so very little reflection will occur. matching the transmitting end to absorb these reflections is only recommended for very sensitive applications. in such cases, 100 w pull-up resistors should be connected from out and outq to ground, as close as possible to the ic pins. these matching resistors will not be needed in most applications, however. the output circuit of the OQ2538HP is depicted in fig.6. for more information see application note an96051 describing the om5801 stm16 demo board. fig.6 rf output topology. handbook, halfpage mgm117 out outq gnd 100 w 100 w
1998 oct 14 8 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers OQ2538HP; oq2538u rf gain and group delay measurements the measurement set-up shown in fig.7 was used to measure the single-ended small signal gain as specified in chapter characteristics. since the network analyzer can only perform single-ended measurements, the single-ended matching scheme described above is used to match the inputs of the OQ2538HP to 50 w . for greater accuracy, the outputs are also matched. the gain measured with this set-up is denoted by s 21 . graphs of typical s 21 and group delay characteristics are shown in figs 8 and 9. the OQ2538HP test pcb used for these measurements can be supplied on request. although the differential voltage gain of the OQ2538HP cannot be measured directly, it can be calculated from s 21 . the differential voltage gain is 6 db greater than the measured s 21 value, typically 46 db (40 + 6 db). if the 100 w matching resistors on the output are omitted, the differential voltage gain is increased by a further 2.4 db, typically to 48.4 db. this is due to the fact that the output load is increased from 25 to 33 w , so the output voltage is increased by a factor of 1.32 (2.4 db). when performing s 21 measurements make sure the input power level is around - 50 dbm, as indicated in fig.7 (port 1 of the network analyzer). for correct measurement results the oq2538 should not be limiting the input signal, but operate in its linear region. this can be achieved by using a very small input signal level of - 50 dbm. fig.7 s 21 and group delay measurement set-up. handbook, full pagewidth mgm111 100 w 50 w sma termination in inq out outq 100 pf 100 pf 50 w semi rigid 100 w 100 w 100 w 50 w sma termination 50 w semi rigid 50 w semi rigid 50 w semi rigid OQ2538HP test pcb p = 50 dbm s-parameter test set 6 ghz network analyzer port 1 port 2 v ee = - 4.5 v z o = 50 w z o = 50 w
1998 oct 14 9 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers OQ2538HP; oq2538u fig.8 s 21 characteristic, measured on the OQ2538HP test pcb. handbook, full pagewidth mgm160 start: 30 khz s 21 log mag 40 db stop: 6 ghz (2) (4) (3) (1) vertical scale 6 db/division. linear frequency sweep; start: 30 khz; stop: 6 ghz. (1) 41.603 db; 1 ghz. (2) 38.633 db; 3.45 ghz. (3) 41.291 db; 2 ghz. (4) 41.386 db; 2.5 ghz.
1998 oct 14 10 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers OQ2538HP; oq2538u fig.9 group delay characteristic, measured on the OQ2538HP test pcb. handbook, full pagewidth mgm161 start: 30 khz s 21 delay 0 ps stop: 6 ghz (2) (4) (3) (1) vertical scale 200 ps/division. linear frequency sweep; start: 30 khz; stop: 6 ghz. (1) 832.91 ps; 1 ghz. (2) 1007.4 ps; 3.45 ghz. (3) 834 ps; 2 ghz. (4) 860.93 ps; 2.5 ghz.
1998 oct 14 11 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers OQ2538HP; oq2538u noise ?gure measurements the noise figure is the ratio of signal-to-noise ratio at the input (s i /n i ) to signal-to-noise ratio at the output (s o /n o ) of the amplifier. this definition is true for both single-ended and differential amplifiers, provided the correct values for s i /n i and s o /n o are substituted in the formula. the noise figure is measured using the differential set-up shown in fig.10. the total noise on the output (n o in dbm) is measured using the spectrum analyzer at the frequency of interest. from this value, the actual (differential) noise figure for that frequency (spot noise figure) can be calculated using the following formula: the factor 2 in the denominator is present to compensate for the fact that s 21 is the single-ended power gain, f s i n i s o n o ----------------- n o 2s 21 n i -------------------------- - n o 2s 21 kt ---------------------------- == = whereas the differential power gain is applicable in this situation. n i can be replaced with the available noise power at the input, which is kt under matched conditions (k is boltzmanns constant). the formula expressed in dbm makes calculation easier: , assuming log(kt) is - 173.8 dbm (t = 298 k) and n o measured in 1 hz bandwidth and expressed in dbm. for the OQ2538HP, in the differential configuration (including the 100 w matching resistors), this yields a typical noise figure of 11 db. while the performance of this measurement set-up cannot match that of a dedicated noise analysis system, the results are comparable for an amplifier with a noise figure of 11 db. fn o = s 21 3 + () 173.8 + C db [] fig.10 noise figure measurement set-up. handbook, full pagewidth mgm112 100 w 50 w sma termination in inq out outq 100 pf 100 pf 50 w semi rigid 100 w 100 w 100 w 50 w sma termination 50 w sma termination 50 w semi rigid 50 w semi rigid 50 w semi rigid OQ2538HP test pcb in spectrum analyzer z o = 50 w v ee = - 4.5 v
1998 oct 14 12 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers OQ2538HP; oq2538u fig.11 agc transfer characteristics. (1) t amb = - 20 c. (2) t amb = +25 c. (3) t amb = +85 c. mge746 0 10 0 203040 100 200 60 80 v agc - v agcdc (mv) 50 v in (mv p-p) (1) (2) (3) fig.12 los detection characteristics. (1) t amb = - 20 c. (2) t amb = +25 c. (3) t amb = +85 c. 0 100 200 v in (mv p-p) 1 0 357 24681011 9 v los - v losdc (mv) mge747 (1) (2) (3) agc and agcdc level detection when using rectifier a as an input signal level detector, the agc and agcdc pins must be decoupled to ground with 100 nf capacitors. the agcdc output is intended as a reference voltage against which the actual agc output voltage can be compared. this voltage difference, v agc - v agcdc , can be used as a control input in an agc loop. a graph depicting output voltage difference as a function of the input signal level (typical) is shown in fig.11. note that an input signal with the specified peak-to-peak value is applied to both in and inq inputs, but with complementary phase. los and losdc level detection the output of rectifier b can be used for los detection. the losdc output provides a reference voltage against which the voltage at the los output can be compared. the voltage difference v los - v losdc can be used as input to a los detection circuit. both outputs need to be decoupled using 100 nf capacitors. a graph depicting v los - v losdc as a function of the input signal level (typical) is shown in fig.12. note that an input signal with the specified peak-to-peak value is applied to both in and inq inputs, but with complementary phase. grounding and power supply decoupling the ground connection on the pcb needs to be a large copper area fill connected to a common ground plane with as low inductance as possible, preferably positioned directly underneath the lqfp48 package. the large area fill will improve heat transfer to the pcb and thus aid ic cooling. all v ee pins (two at each corner) need to be connected to a common supply plane with as low inductance as possible. this plane should be decoupled to ground. to avoid high frequency resonance, multiple bypass capacitors should not be mounted at the same location. to minimize low frequency switching noise in the vicinity of the OQ2538HP, the power supply line should be filtered once using an lc-circuit with a low cut-off frequency (see fig.14).
1998 oct 14 13 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers OQ2538HP; oq2538u using alternative supply voltages although the OQ2538HP is intended to be used with a single - 4.5 v supply voltage, a slightly modified - 5v supply can also be used. by connecting a schottky diode between the v ee power supply line and the ic, an additional 0.5 v voltage drop is obtained, bringing the supply voltage on the pins of the OQ2538HP within the specified range. a bas85 schottky diode is recommended. a - 5 v application schematic is shown in fig.15. extrapolating from this case, a +5 v application is also possible. however, care should be taken with the rf transmission lines. the on-chip signals refer to the gnd pins, which become the positive supply pins in a +5 v application. the external transmission lines will most likely be referenced to system ground (v ee pins). the rf signals will change from one reference plane to another at the interface to the rf input and output pins. the positive supply application is very vulnerable to interference at this point. for a successful +5 v application, special care should be taken when designing board layout to reduce the influence of interference and keep the positive supply as clean as possible. esd protection exceptions have been made to the standard esd protection scheme in order to achieve high frequency performance. the inputs in and inq and the outputs out and outq have no protection against esd. all other pins have a standard esd protection structure, capable of withstanding 2 kv human body model (hbm) zappings.
1998 oct 14 14 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers OQ2538HP; oq2538u limiting values in accordance with the absolute maximum rating system (iec 134). note 1. d v i =v in - v inq (ac only). the dc level is internally controlled. handling precautions should be taken to avoid damage through electrostatic discharge. this is particularly important during assembly and handling of the bare die. additional safety can be obtained by bonding the v ee and gnd pads first, the remaining pads may then be bonded to their external connections in any order (see also section esd protection). thermal characteristics note 1. r th(j-a) will be in the application from 15 to 65 k/w, dependent on the pcb layout. symbol parameter conditions min. max. unit v ee negative supply voltage - 6.0 +0.5 v d v i input voltage difference note 1 - 600 +600 mv i in , i inq input current - 2.0 +2.0 ma i n dc current pins 30 and 32 - 6 +10 ma pins 3, 18, 19 and 43 - 3+3ma pin 21 - 2+2ma pins 44 and 45 - 1+1ma pin 22 - 0.1 +0.1 ma p tot total power dissipation - 380 mw t j junction temperature - 150 c t stg storage temperature - 65 +150 c symbol description conditions value unit r th(j-s) thermal resistance from junction to solder point 15 k/w r th(j-a) thermal resistance from junction to ambient note 1 65 k/w
1998 oct 14 15 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers OQ2538HP; oq2538u characteristics at nominal supply voltages; t amb = - 40 to +85 c; 50 w measuring environment. symbol parameter conditions min. typ. max. unit v ee negative supply voltage - 4.725 - 4.5 - 4.275 v i ee negative supply current - 60 80 ma p tot total power dissipation note 1 - 270 380 mw t amb operating ambient temperature note 2 - 40 - +85 c t j operating junction temperature - 40 - +120 c main ampli?er inputs: in and inq; note 3 v i(sens) input sensitivity note 4 - 0.5 2.5 mv v i(p-p) signal voltage swing (peak-to-peak value) note 4 2.5 - 600 mv v i dc input voltage note 5 - 2.4 - 2.1 - 1.7 v v io input offset voltage note 6 - 0.2 - mv z i single-ended input impedance note 7 - 100 -w s 21 single-ended small signal gain note 8 34 40 - db g v(dif) differential voltage gain note 9 - 48.5 - db n o output noise power note 10 -- 120 - dbm f noise ?gure note 10 - 11 - db b - 3db 3 db bandwidth 2.4 3.0 - ghz recti?er outputs: agc and agcdc; note 11 v o(ref) dc reference voltage open output - 3.3 - 3.0 - 2.5 v v i(p-p) input voltages on pins in and inq for linear recti?er output (peak-to-peak value) 12.5 - 60 mv d v maximum input signal level related voltage difference note 12 - 400 - mv v oo output offset voltage note 13 - 5 - +5 mv recti?er outputs: los and losdc; note 11 v o(ref) dc reference voltage open output - 3.4 - 3.1 - 2.6 v v i(p-p) input voltages on pins in and inq for linear reciti?er output (peak-to-peak value) 2.5 - 9mv d v maximum input signal level related voltage difference note 12 - 450 - mv v oo output offset voltage note 13 - 15 - +15 mv automatic offset compensation lowpass ?lter: coff and coffq v o dc output voltage open output - 2.4 - 2.1 - 1.7 v r offset compensation ?lter resistance - 1250 -w band gap reference: ref v o band gap voltage referenced to v ee ; open output; note 14 1.1 1.3 1.5 v
1998 oct 14 16 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers OQ2538HP; oq2538u notes 1. no special cooling is required in the application if the total thermal resistance r th(j-a) is less than 90 k/w. 2. the temperature of the pcb in the vicinity of the ic is taken to be the ambient temperature. 3. the input signal must be ac-coupled to the inputs through a coupling capacitance >22 nf. 4. v i(p-p) is the input signal on in and inq for full output clipping. it is assumed that both inputs carry a complementary signal of the specified peak-to-peak value. the lower specified limit is usually called the input sensitivity. this value is defined as a 20% increase in rise and fall times when compared to rise and fall times with a complementary input signal of 10 mv (p-p) applied to in and inq. 5. the dc voltage is fixed internally; only ac-coupling of the input signal is allowed. 6. v io = ? v in - v inq ? 7. see section rf input matching circuit for detailed information. 8. all signal ports are ac-matched to 50 w and are measured at 1 ghz (see fig.7). flatness deviations are within 3db over the entire bandwidth. 9. see section rf gain and group delay measurements. 10. f is the noise figure for a differential application and is measured at 1 ghz. see section noise figure measurements. 11. an external 100 nf capacitor is connected at each output to remove any spurious high frequency signals. any circuitry driven from these pins must have an input impedance >50 k w . 12. voltage difference between agc (los) and agcdc (losdc), measured with a differential square wave input signal of 600 mv (p-p) on in and inq. 13. the offset is measured with inputs in and inq shorted together. 14. the band gap voltage may not be used as an external reference. 15. both outputs are connected to ground through a 50 w load resistance and carry complementary signals. 16. the output levels are dependent on load impedance. the specified values assume an external load impedance of 50 w . if the external 100 w matching resistors are connected at pins out and outq, the output levels will fall to 75% of the specified values (see also section rf gain and group delay measurements). band gap reference decoupling: capa v o decoupling voltage referenced to v ee ; open output - 2.9 - v main ampli?er outputs: out and outq; note 15 v oh high-level output voltage - 20 - 50 mv v ol low-level output voltage note 16 - 280 - 200 - 140 mv t r differential output rise time input signal >2.5 mv (p-p) - 100 150 ps t f differential output fall time input signal >2.5 mv (p-p) - 100 150 ps z o single-ended output impedance see fig.6 83 100 117 w symbol parameter conditions min. typ. max. unit
1998 oct 14 17 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers OQ2538HP; oq2538u application information fig.13 system application diagram. handbook, full pagewidth mge748 i photo v bias photodiode r fb trans- impedance amplifier limiting amplifier data and clock recovery filter cgy2100 OQ2538HP oq2541hp to data and clock recovery unit data recovered clock fig.14 typical application schematic. handbook, full pagewidth mge749 10 m h 1 nf 100 nf 4.7 m f 100 nf 100 nf 33 nf 100 nf 100 nf OQ2538HP in inq in 8 16 3 43 19 18 22 21 44 45 30 32 c in c inq inq agc los losdc v ee gnd agcdc out outq coffq coff ref capa gain regulation loss of signal detection - 4.5 v 200 w > 22 nf > 22 nf v ee
1998 oct 14 18 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers OQ2538HP; oq2538u fig.15 - 5 v application schematic. handbook, full pagewidth mgm113 10 m h 1 nf 100 nf 4.7 m f 100 nf 100 nf 33 nf 100 nf 100 nf OQ2538HP in inq in 8 16 3 43 19 18 22 21 44 45 30 32 c in c inq inq agc los losdc v ee gnd agcdc out outq coffq coff ref capa gain regulation loss of signal detection - 5.0 v 200 w > 22 nf > 22 nf v ee bas85
1998 oct 14 19 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers OQ2538HP; oq2538u bonding pad locations fig.16 bonding pad locations of oq2538u. (1) typical value. handbook, full pagewidth 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 gnd gnd gnd gnd gnd inq in v ee v ee gnd gnd outq gnd out gnd gnd n.c. n.c. gnd gnd gnd agcdc coffq coff v ee v ee gnd gnd gnd ref capa losdc los mgr525 2.07 mm (1) 2.07 (1) mm oq2538u x y 0 0 agc v ee v ee
1998 oct 14 20 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers OQ2538HP; oq2538u table 1 bonding pad locations. all x/y coordinates represent the position of the centre of the pad with respect to the centre of the die (see fig.16). symbol pad coordinates xy gnd 1 - 900 - 700 v ee 2 - 900 - 900 v ee 3 - 700 - 900 gnd 4 - 500 - 900 gnd 5 - 300 - 900 losdc 6 - 100 - 900 los 7 +100 - 900 gnd 8 +300 - 900 ref 9 +500 - 900 capa 10 +700 - 900 v ee 11 +900 - 900 v ee 12 +900 - 700 gnd 13 +900 - 500 gnd 14 +900 - 300 outq 15 +900 - 100 gnd 16 +900 +100 out 17 +900 +300 gnd 18 +900 +500 gnd 19 +900 +700 n.c. 20 +900 +900 gnd 21 +700 +900 n.c. 22 +500 +900 gnd 23 +300 +900 gnd 24 +100 +900 agcdc 25 - 100 +900 coffq 26 - 300 +900 coff 27 - 500 +900 v ee 28 - 700 +900 v ee 29 - 900 +900 agc 30 - 900 +700 gnd 31 - 900 +500 gnd 32 - 900 +300 inq 33 - 900 +100 gnd 34 - 900 - 100 in 35 - 900 - 300 gnd 36 - 900 - 500 symbol pad coordinates xy table 2 physical characteristics of bare die parameter value glass passivation 0.8 m m silicon nitride on top of 0.9 m m psg (phosphosilicate glass) bonding pad dimension minimum dimension of exposed metallization is 90 90 m m (pad size = 100 100 m m) metallization 1.8 m m alcu (1% cu) thickness 380 m m nominal size 2.070 2.070 mm (4.285 mm 2 ) backing silicon; electrically connected to v ee potential through substrate contacts attache temperature <440 c; recommended die attache is glue attache time <15 s
1998 oct 14 21 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers OQ2538HP; oq2538u package outline unit a max. a 1 a 2 a 3 b p ce (1) eh e ll p z y w v q references outline version european projection issue date iec jedec eiaj mm 1.60 0.20 0.05 1.45 1.35 0.25 0.27 0.17 0.18 0.12 7.1 6.9 0.5 9.15 8.85 0.95 0.55 7 0 o o 0.12 0.1 0.2 1.0 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. 0.75 0.45 sot313-2 94-12-19 97-08-01 d (1) (1) (1) 7.1 6.9 h d 9.15 8.85 e z 0.95 0.55 d b p e e b 12 d h b p e h v m b d z d a z e e v m a 1 48 37 36 25 24 13 q a 1 a l p detail x l (a ) 3 a 2 x y c w m w m 0 2.5 5 mm scale pin 1 index lqfp48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm sot313-2
1998 oct 14 22 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers OQ2538HP; oq2538u soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (order code 9398 652 90011). re?ow soldering reflow soldering techniques are suitable for all lqfp packages. reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. throughput times (preheating, soldering and cooling) vary between 50 and 300 seconds depending on heating method. typical reflow peak temperatures range from 215 to 250 c. wave soldering wave soldering is not recommended for lqfp packages. this is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. caution wave soldering is not applicable for all lqfp packages with a pitch (e) equal or less than 0.5 mm. if wave soldering cannot be avoided, for lqfp packages with a pitch (e) larger than 0.5 mm, the following conditions must be observed: a double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. the footprint must be at an angle of 45 to the board direction and must incorporate solder thieves downstream and at the side corners. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. maximum permissible solder temperature is 260 c, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 c within 6 seconds. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. repairing soldered joints fix the component by first soldering two diagonally- opposite end leads. use only a low voltage soldering iron (less than 24 v) applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
1998 oct 14 23 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers OQ2538HP; oq2538u definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. bare die disclaimer all die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of ninety (90) days from the date of philips' delivery. if there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. there is no post waffle pack testing performed on individual die. although the most modern processes are utilized for wafer sawing and die pick and place into waffle pack carriers, philips semiconductors has no control of third party procedures in the handling, packing or assembly of the die. accordingly, philips semiconductors assumes no liability for device functionality or performance of the die or systems after handling, packing or assembly of the die. it is the responsibility of the customer to test and qualify their application in which the die is used. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
internet: http://www.semiconductors.philips.com philips semiconductors C a worldwide company ? philips electronics n.v. 1998 sca60 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. middle east: see italy netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 pakistan: see singapore philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland: ul. lukiska 10, pl 04-123 warszawa, tel. +48 22 612 2831, fax. +48 22 612 2327 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 319762, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 7430 johannesburg 2000, tel. +27 11 470 5911, fax. +27 11 470 5494 south america: al. vicente pinzon, 173, 6th floor, 04547-130 s?o paulo, sp, brazil, tel. +55 11 821 2333, fax. +55 11 821 2382 spain: balmes 22, 08007 barcelona, tel. +34 93 301 6312, fax. +34 93 301 4107 sweden: kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 5985 2000, fax. +46 8 5985 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2741 fax. +41 1 488 3263 taiwan: philips semiconductors, 6f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2865, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, tel. +66 2 745 4090, fax. +66 2 398 0793 turkey: talatpasa cad. no. 5, 80640 gltepe/istanbul, tel. +90 212 279 2770, fax. +90 212 282 6707 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 181 730 5000, fax. +44 181 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 625 344, fax.+381 11 635 777 for all other countries apply to: philips semiconductors, international marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 34 waterloo road, north ryde, nsw 2113, tel. +61 2 9805 4455, fax. +61 2 9805 4466 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 160 1010, fax. +43 160 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 200 733, fax. +375 172 200 773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 689 211, fax. +359 2 689 102 canada: philips semiconductors/components, tel. +1 800 234 7381 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: prags boulevard 80, pb 1919, dk-2300 copenhagen s, tel. +45 32 88 2636, fax. +45 31 57 0044 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615800, fax. +358 9 61580920 france: 51 rue carnot, bp317, 92156 suresnes cedex, tel. +33 1 40 99 6161, fax. +33 1 40 99 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 23 53 60, fax. +49 40 23 536 300 greece: no. 15, 25th march street, gr 17778 tavros/athens, tel. +30 1 4894 339/239, fax. +30 1 4814 240 hungary: see austria india: philips india ltd, band box building, 2nd floor, 254-d, dr. annie besant road, worli, mumbai 400 025, tel. +91 22 493 8541, fax. +91 22 493 0966 indonesia: pt philips development corporation, semiconductors division, gedung philips, jl. buncit raya kav.99-100, jakarta 12510, tel. +62 21 794 0040 ext. 2501, fax. +62 21 794 0080 ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, piazza iv novembre 3, 20124 milano, tel. +39 2 6752 2531, fax. +39 2 6752 2557 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108-8507, tel. +81 3 3740 5130, fax. +81 3 3740 5077 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381 printed in the netherlands 425102/400/02/pp24 date of release: 1998 oct 14 document order number: 9397 750 04257

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